I.  rEZISTORY PODSTROE^NYE.

    1.  sp5-1 (sp5-2)                   470-2.2K    40 [T.
    2.  sp5-1 (sp5-2)                   22K-47K     40 [T.
    3.  sp3-1                           1K-4.7K     40 [T.

II. rAZ_EMY.

    1.  r{-2m                                       50 [T.
    2.  rp5-9                                       40 [T.
    3.  rp10-5                                      20 [T.

III.kONDENSATORY \LEKTROLITI^ESKIE.

    1.  k50-6 (k52-2,|to)    500 MKF * 25 w         20 [T.
    2.  k50-6 (k52-2,|to)    200 MKF * 25 w         20 [T.
    3.  k50-6 (k52-2,|to)    500 MKF * 16 w         20 [T.
    4.  k50-6 (k52-2,|to)    200 MKF * 16 w         20 [T.
    5.  k50-6 (k52-2,|to) 500(200,1000) MKF * 75 w  50 [T.

IV. sTABILITRONY.

    1.  d814d                                       30 [T.
    2.  ks133                                       40 [T.

V.  tRANZISTORY

    1.  kt3102a(b)                                 100 [T.
    2.  kt819w(g,d,wm...dm)                         50 [T.

VI. kONDENSATORY BIPOLQRNYE.

    1.km-6(k10-...)         470 Pf                 100 [T.
    2.km-6(k10-...)         750 Pf                 100 [T.
    3.km-6(k10-...)        1000 Pf                 100 [T.
    4.km-6(k10-...)        1500 Pf                 100 [T.
    5.km-6(k10-...)        3300 Pf                 100 [T.
    6.km-6(k10-...)       30000 Pf                  50 [T.
    7.km-6(k10-...)      100000 Pf                 100 [T.
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